| Basis of difference | Intrinsic semiconductor | Extrinsic semiconductor |
| Doping of impurity | Doping or addition of impurity does not take place in intrinsic semiconductor. | A small amount of impurity is dopped in a pure semiconductor for preparing extrinsic semiconductor. |
| Density of electrons and holes | The number of free electrons in the conduction band is equal to the number of holes in the valence band. | The number of electrons and holes are not equal. |
| Electrical conductivity | Electrical conductivity is low. | Electrical conductivity is high |
| Dependency of electrical conductivity | Electrical conductivity is a function of temperature alone. | Electrical conductivity depends on temperature as well as on the amount of impurity doping in the pure semiconductor. |
| Example | Crystalline form of pure Silicon and Germanium. | Impurity like As, Sb, P, In, Bi, Al etc. are dopped with Germanium and Silicon atom. |