| Basis of difference | P type semiconductor | N type semiconductor |
| Group of Doping Element | In P type semiconductor III group element is added as doping element. | In n type semiconductor V group element is added as doping element. |
| Nature of Doping Element | Impurity added creates vacancy of electrons (holes) called as Acceptor Atom. | Impurity added provides extra electrons and is known as Donor Atom. |
| Type of impurity added | Trivalent impurity like Al, Ga, In etc. is added. | Pentavalent impurity like P, As, Sb, Bi etc. is added. |
| Majority Carriers | Holes are majority carriers | Electrons are majority carriers |
| Minority Carriers | Electrons are minority carriers | Holes are minority carriers |
| Density of Electrons and Holes | The hole density is much greater than the electron density. nh >> ne | The electron density is much greater than the hole density. ne >> nh |
| Energy level | The acceptor energy level is close to the valence band and away from the conduction band. | The donor energy level is close to the conduction band and away from the valence band. |
| Fermi level | Fermi level lies between acceptor energy level and the valence band. | Fermi level lies between donor energy level and the conduction band. |
| Movement of Majority carriers | Majority carriers move from higher to lower potential. | Majority carriers move from lower to higher potential. |